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| New Product V8P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.466 V at IF = 4 A FEATURES TMBS(R) K eSMPTM Series * Very low profile - typical height of 1.1 mm * Ideal for automated placement * Trench MOS Schottky Technology 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 * Low forward voltage drop, low power losses * High efficiency operation * Meets MSL level 1, per J-STD-020C, LF max peak of 260 C * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, dc-to-dc converters and polarity protection applications. MECHANICAL DATA Case: TO-277A (SMPC) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified) MAJOR RATINGS AND CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 8 A Tj max. 8A 100 V 150 A 100 mJ 0.582 V 150 C MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (see Fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at IAS = 2.0 A, L = 50 mH, Tj = 25 C Voltage rate of change (rated VR) Operating junction and storage temperature range VRRM IF(AV) IFSM EAS dv/dt TJ, TSTG SYMBOL V8P10 V810 100 8 150 100 10000 - 40 to + 150 V A A mJ V/s C UNIT Document Number: 89005 Revision: 26-Jun-07 www.vishay.com 1 New Product V8P10 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Breakdown voltage TEST CONDITIONS at IR = 1.0 mA at IF = 4 A at IF = 8 A at IF = 4 A at IF = 8 A at VR = 70 V Reverse current (1) at VR = 100 V Note: (1) Pulse test: 300 s pulse width, 1 % duty cycle Tj = 25 C Tj = 25 C VF Tj = 125 C Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C SYMBOL V(BR) TYP 100 (minimum) 0.522 0.643 0.466 0.582 4.7 3.0 IR 14.5 7.0 MAX. 0.68 V 0.62 70 15 A mA A mA UNIT V Instantaneous forward voltage (1) THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Typical thermal resistance Note: (1) Units mounted on recommended P.C.B. 1 oz. pad layout SYMBOL RJA (1) RJL V8P10 60 3 UNIT C/W ORDERING INFORMATION (Example) PREFERRED P/N V8P10-E3/86A V8P10-E3/87A V8P10HE3/86A (1) V8P10HE3/87A (1) Note: (1) Automotive grade AEC Q101 qualified UNIT WEIGHT (g) 0.10 0.10 0.10 0.10 PREFERRED PACKAGE CODE 86A 87A 86A 87A BASE QUANTITY 1500 6500 1500 6500 DELIVERY MODE 7" Diameter Plastic Tape & Reel 13" Diameter Plastic Tape & Reel 7" Diameter Plastic Tape & Reel 13" Diameter Plastic Tape & Reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 10 Resistive or Inductive Load 7.0 D = 0.5 6.0 D = 0.3 D = 0.2 D = 0.1 4.0 3.0 2.0 1.0 0 0 25 50 75 100 125 150 175 0 2 4 6 8 10 D = 1.0 D = 0.8 Average Forward Current (A) Average Power Loss (W) 8 5.0 6 4 T 2 TL measured at the cathode band terminal D = tp/T tp 0 Lead Temperature (C) Average Forward Current (A) Figure 1. Maximum Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics www.vishay.com 2 Document Number: 89005 Revision: 26-Jun-07 New Product V8P10 Vishay General Semiconductor 100 10000 Tj = 150 C Instantaneous Forward Current (A) 10 Tj = 125 C Junction Capacitance (pF) Tj = 25 C 1000 1 100 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 10 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Figure 5. Typical Junction Capacitance 100 100 Transient Thermal Impedance (C/W) Instantaneous Reverse Current (mA) Tj = 150 C 10 Tj = 125 C 1 Junction to Ambient 10 0.1 0.01 Tj = 25 C 0.001 10 20 30 40 50 60 70 80 90 100 1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Figure 6. Typical Transient Thermal Impedance Document Number: 89005 Revision: 26-Jun-07 www.vishay.com 3 New Product V8P10 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) K 0.016 (0.40) 0.006 (0.15) 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 0.026 (0.65) nom 2 1 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) 0.087 (2.20) 0.075 (1.90) 0.047 (1.20) 0.039 (1.00) Mounting Pad Layout 0.189 MIN. (4.80) 0.189 (4.80) 0.173 (4.40) 0.155 (3.94) nom 0.75 nom 0.268 (6.80) 0.186 MIN. (4.72) 0.049 (1.24) 0.037 (0.94) 0.084 (2.13) nom 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.050 MIN. (1.27) 0.055 MIN. (1.40) Conform to JEDEC TO-277A www.vishay.com 4 Document Number: 89005 Revision: 26-Jun-07 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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